MIAA20WE600TMH【PDF 2/8 页】MODULE IGBT CBI

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Advanced Technical Information

MIAA20WE600TMH

Ouput Inverter T1 - T6

Ratings

Symbol

V CES

V GES

V GEM

I C25

I C80

P tot

Definitions

collector emitter voltage

max. DC gate voltage

max. transient collector gate voltage

collector current

total power dissipation

Conditions

continuous

transient

T VJ = 50°C

T C = 25°C

T C = 80°C

T C = 25°C

min.

typ.

max.

600

±20

±30

29

20

00

Unit

V

V

V

A

A

W

V CE(sat)

collector emitter saturation voltage

I C = 20 A; V GE = 5 V

T VJ = 25°C

T VJ = 25°C

2.

2.4

2.7

V

V

V GE(th)

I CES

gate emitter threshold voltage

collector emitter leakage current

I C = 0.5 A; V GE = V CE

V CE = V CES ; V GE = 0 V

T VJ = 25°C

T VJ = 25°C

T VJ = 25°C

4.5

5.5

.3

6.5

.

V

mA

mA

I GES

C ies

Q G(on)

gate emitter leakage current

input capacitance

total gate charge

V GE = ±20 V

V CE = 25 V; V GE = 0 V; f = MHz

V CE = 300 V; V GE = 5 V; I C = 20 A

900

76

50

nA

pF

nC

t d(on)

t r

t d(off)

t f

E on

E off

t d(on)

t r

t d(off)

t f

E on

E off

turn-on delay time

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

turn-on delay time

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V CE = 300 V; I C = 20 A

V GE = ± 5 V; R G = 47 W

inductive load

V CE = 300 V; I C = 20 A

V GE = ± 5 V; R G = 47 W

T VJ = 25°C

T VJ = 25°C

35

45

55

75

0.39

0.4

35

45

65

50

0.6

0.54

ns

ns

ns

ns

mJ

mJ

ns

ns

ns

ns

mJ

mJ

RBSOA

I SC

(SCSOA)

reverse bias safe operating area

short circuit safe operating area

V GE = ± 5 V; R G = 47 W ; I C = 40 A T VJ = 25°C

V CE = 360 V; V GE = ± 5 V; T VJ = 25°C

R G = 47 W ; t p = 0 μs; non-repetitive

V CEK < V CES -L S · d I /dt

90

V

A

R thJC

R thCH

thermal resistance junction to case

thermal resistance case to heatsink

(per IGBT)

0.45

.3

K/W

K/W

Output Inverter D1 - D6

Ratings

Symbol

V RRM

I F25

I F80

V F

Q rr

I RM

t rr

E rec

R thJC

R thCH

Definitions

max. repetitve reverse voltage

forward current

forward voltage

reverse recovery charge

max. reverse recovery current

reverse recovery time

reverse recovery energy

thermal resistance junction to case

thermal resistance case to heatsink

Conditions

I F = 20 A; V GE = 0 V

V R = 300 V

di F /dt = -370 A/μs

I F = 20 A; V GE = 0 V

(per diode)

T VJ = 50°C

T C = 25°C

T C = 80°C

T VJ = 25°C

T VJ = 25°C

T VJ = 25°C

min.

typ.

.95

.65

0.58

0.7

0

60

0.55

max.

600

37

24

2.2

.6

Unit

V

A

A

V

V

μC

A

ns

μJ

K/W

K/W

T C = 25°C unless otherwise stated

IXYS reserves the right to change limits, test conditions and dimensions.

? 2008 IXYS All rights reserved

20080326b

2-8

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